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FUJITSU SEMICONDUCTOR DATA SHEET
DS04-27602-1E
ASSP
BIPOLAR
Power Supply
Power Management Switching IC
(with flash memory power switching function)
MB3807A
s DESCRIPTION
When data is written to or read from flash memory, it requires that the voltage at its power supply (VPP) be switched (to 12 V for writing and to 3.3 or 5.0 V for reading). The MB3807A is a power management switching IC, designed to be compatible with the PCMCIA digital controller, to switch the VPP voltage of flash memory. When the switch is turned on, optimum voltage is applied to the gate of the internal charge pump N-ch MOS switch, providing a constant amount of ON resistance. The ON resistance is also kept to be low to reduce voltage drop at the VPP pin that is caused by large current flowing when data is written. In addition, the OFF time is much shorter than the ON time to prevent short-circuiting between the reading and writing power supplies when the device switches the VPP voltage for reading or writing data (break-before-make operation).
s FEATURES
* Switching at low ON resistance For writing data: SWIN1 = 12 V, Ron = 0.3 For reading data: SWIN2 = 5 V, Ron = 6.0 SWIN2 = 3.3 V, Ron = 8.5 * Wide range of supply voltages: VCC = 2.7 to 5.5 V * Prevention of reverse current from the load at switch-off time * ON time controllable with external pin * Break-before-make operation
s PACKAGE
16 pin Plastic SOP
(FPT-16P-M04)
MB3807A
s PIN ASSIGNMENT
(TOP VIEW) EN1A EN0A SWIN2A SWIN1A SWIN1B SWIN2B EN0B GND 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9
VCC DLYA SWOUTA SWOUTA SWOUTB SWOUTB DLYB EN1B
(FPT-16P-M04)
s LOGICAL OPERATION TABLE
EN1 0 0 1 1 EN0 0 1 0 1 SW1 OFF OFF ON OFF SW2 OFF ON OFF OFF
2
MB3807A
s PIN DESCRIPTION
Pin No. 1 9 2 7 4 5 3 6 13, 14 11, 12 15 10 Pin name EN1A EN1B EN0A EN0B SWIN1A SWIN1B SWIN2A SWIN2B SWOUTA SWOUTB DLYA DLYB These pins connect the 12-V power supply for writing data to flash memory. When the SW1 is turned on, the voltage at the SWIN1 pin is output to the SWOUT pin. These pins also serve as power supply pins for the charge pump on the SW1 side. For switching, the pins require a voltage higher than VCC. These pins connect the 3.3/5.0-V power supply for reading data from flash memory. When the SW2 is on, the voltage at the SWIN2 pin is output to the SWOUT pin. These pins also serve as power supply pins for the charge pump on the SW2 side. For switching, the pins require a voltage higher than VCC. These pins are output pins of the switch. A pair of two pins are used commonly as either SWOUTA or SWOUTB pins. These pins are connected to the VPP pin of the flash memory. These pins control the switch ON time. The ON time is controllable using an external capacitor. Leave these pins open when not in use. Note that a voltage of about 25 V is generated when the pins are open. Since high impedance is required, be careful when mounting the device not to generate current leakage. Power supply pin Ground pin Function These pins turn the corresponding switches on and off depending on the PCMCIA compatible signals, as shown in "LOGICAL OPERATION TABLE."
16 8
VCC GND
3
MB3807A
s BLOCK DIAGRAM
DLY
Switch-off circuit SWIN1 Power supply for writing (SW1) SWIN2 Switch-on circuit (Charge pump) (SW2) Switch-off circuit Power supply for reading SWOUT VPP Flash memory
EN1
Switch-on circuit (Charge pump)
EN0
Note: The MB3807A contains a pair of above circuit blocks.
s BLOCK DESCRIPTION
The SWIN1 and SWIN2 pins are connected to the 12-V and 3.5/5.0-V power supplies, respectively. The SWOUT pin is connected to the VPP power supply pin of the flash memory. When conditions, EN1 = "H" and EN0 = "L" are established in an attempt to write data to flash memory, the switchon circuit (charge pump) on the SW1 side is activated. The charge pump applies optimum voltage to the SW1 gate to turn the switch on, causing the SWOUT pin to supply 12-V power from the SWIN1 pin to the VPP pin of the flash memory. On the SW2 side, the switch-off circuit discharges the SW2 gate voltage to the GND to turn the switch off. Reading data from flash memory assume the conditions EN1 = "L" and EN0 = "H." When the conditions are established, the switch-on circuit (charge pump) on the SW2 side and the switch-off circuit on the SW1 side are activated to cause the SWOUT pin to supply 3.3/5.0-V power from the SWIN2 pin to the VPP pin of the flash memory. Since the switch-on circuits are powered from the SWIN1 and SWIN2 pins, 80 to 350 A current flows from the SWIN1 and SWIN2 pins to the GND when the switch is turned on. The back gate of the N-channel MOS is connected to the GND. This prevents reverse current from flowing at switchoff time, regardless of the high potential of SWIN1 or SWIN2 pin and the SWOUT pin. The DLY pin is an external capacitance connector to delay turning the switch on. Controlling the switch ON time minimizes surge current flowing to the capacitor connected to the load when the switch is turned on.
4
MB3807A
s ABSOLUTE MAXIMUM RATINGS (See WARNING)
Parameter Input voltage Switching voltage Symbol VIN VSWIN1 VSWIN2 ISWIN1 ISWIN2 PD Tstg Conditions -- -- -- Switch-on peak Ta +75C -- Ratings Min. -0.3 -0.3 -0.3 -- -- -- -55 Max. 7 18 18 1.5 0.3 290 +125 Unit V V V A A mW C
Switching current Permissible loss Storage temperature
WARNING: Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
s RECOMMENDED OPERATING CONDITIONS
Parameter Supply voltage High-level input voltage Low-level input voltage Symbol VCC VIH VIL VSWIN1 Switching voltage VSWIN2 ISWIN1 ISWIN2 CDLY IDLY Top Conditions -- -- -- -- Switch OFF state -- Switch OFF state Switch ON state Switch ON state -- -- -- Values Min. 2.7 VCC x 0.8 0 VCC 0 VCC 0 -- -- -- -0.1 -40 Max. 5.5 VCC VCC x 0.2 15.0 15.0 6.0 6.0 500 100 10 0.1 +75 Unit V V V V V V V mA mA nF A C
Switching current DLY pin capacitance for connection DLY pin leakage current Operating temperature
5
MB3807A
s ELECTRIC CHARACTERISTICS
1. DC Characteristics
(Ta = -40C to +75C) Parameter Switch resistance (SW1) Switch resistance (SW2) Symbol RON1 RON2 RONT1 Switch resistance RONT2 High-level input current Low-level input current IIH IIL IL1 Switch-off leakage current IL2 ISWON1 ISWON2 VDLY ICC Conditions VSWIN1 = 12 V, ISWIN1 = 500 mA VCC = 3 V, 5 V, Ta = +25C VSWIN2 = 3 to 5 V, ISWIN2 = 100 mA VCC = 3 V, 5 V, Ta = +25C VSWIN1 = 12 V, ISWIN1 = 500 mA VCC = 3 V, 5 V VSWIN2 = 3 to 5 V, ISWIN2 = 100 mA VCC = 3 V, 5 V VCC = 5.5 V, VIH = 5.5 V VCC = 5.5 V, VIL = 0 V EN0 = 0 V, EN1 = 0 V or EN0 = 3 V, EN1 = 3 V VSWIN1 = 15 V, VCC = 3 V EN0 = 0 V, EN1 = 0 V or EN0 = 3 V, EN1 = 3 V VSWIN2 = 6 V, VCC = 3 V EN0 = 0 V, EN1 = 5 V VCC = 5 V, VSWIN1 = 12 V EN0 = 5 V, EN1 = 0 V VCC = 5 V, VSWIN2 = 5 V VCC = 5 V, VSWIN2 = 12 V EN0 = 5 V, EN1 = 0 V or EN0 = 5 V, EN1 = 0 V VCC = 5 V Values Min. -- -- -- -- -- -10 -- Typical*1 300 6 -- -- 0 0 0 Max. 450 10 610 14 10 -- 10 Unit m m A A A
-- 175 30 -- 50
0 350 80 24 100
10 700 200 35 300
A A A V A
Charge pump driving current*2 DLY output voltage Supply current
, *1: Typical values assume VCC = TYP Ta = +25C. *2: The charge pump driving current flows from SWIN to GND when the switch is turned on.
6
MB3807A
2. AC Characteristics
Parameter Symbol tON1 ON time tON2 tON3 tON4 tOFF1 OFF time tOFF2 tOFF3 tOFF4 tHYS1 ON/OFF time difference tHYS2 tHYS3 tHYS4 Note: ON/OFF time difference: tHYS1 = tON1 - tOFF3 tHYS2 = tON2 - tOFF4 tHYS3 = tON3 - tOFF1 tHYS4 = tON4 - tOFF2 Conditions VSWIN1 = 12 V, R = 24 , VCC = 5 V VSWIN1 = 12 V, R = 24 , VCC = 3 V VSWIN2 = 5 V, R = 50 , VCC = 5 V VSWIN2 = 3 V, R = 30 , VCC = 3 V VSWIN1 = 12 V, R = 24 , VCC = 5 V VSWIN1 = 12 V, R = 24 , VCC = 3 V VSWIN2 = 5 V, R = 50 , VCC = 5 V VSWIN2 = 3 V, R = 30 , VCC = 3 V -- -- -- -- (Ta = -40C to +75C) Values Unit Typical Max. 60 60 90 400 30 40 7 7 53 53 60 360 140 140 200 1200 60 70 20 20 130 130 190 12000 s s s s s s s s s s s s
Min. 30 30 40 200 10 10 1 1 29 29 30 190
7
MB3807A
s AC SPECIFICATION TEST DIAGRAM
* Measurement Conditions
DLY VCC SWIN1 EN0 SWIN2 EN1 SWOUT 3 V/5 V GND Measurement point R 12 V (OPEN)
R: Load resistance
s TIMING DIAGRAM
* ON-time and OFF-time Waveforms
tr 90 % EN1 10 % 50 % 90 % 50 % 10 % tr 90 % EN0 10 % 50 % 90 % 50 % 10 % 0V tr VCC 0V tr VCC
tON1, 2 90 % SWOUT (SW1)
tOFF1, 2
. VSWIN1 = .
10 % tON3, 4 90 % SWOUT (SW2) 10 % tOFF1, 2
0V
. VSWIN2 = .
0V
Note: The EN0/EN1 rise and fall times (10 %, 90 %) are each 1 ms or less.
(Continued)
8
MB3807A
(Continued)
tf 90 % EN1 50 % 10 % 10 % tr 90 % 50 % 0V tf 90 % EN0 50 % 10 % 10 % tr 90 % 50 % 0V VCC VCC
tON1, 2 90 % SWOUT (SW1)
tOFF1, 2 . VSWIN1 = .
10 % tON3, 4 90 % SWOUT (SW2) 10 % tOFF1, 2
0V . VSWIN2 = .
0V
Note: The EN0/EN1 rise and fall times (10 %, 90 %) are each 1 ms or less.
9
MB3807A
s APPLICATION
3.3 V 5.0 V MB3802 PCMCIA card slot A A: VCC
A: VPP 12.0 V
PCMCIA controller MB3807A
B: VPP
PCMCIA card slot B
B: VCC
MB3802
10
MB3807A
s TYPICAL CHARACTERISTIC CURVES
ON resistance (SW1) 400 VCC = 3.0 V VCC = 5.0 V ISW = 500 mA 350 10 9 VCC = 3.0 V VCC = 5.0 V ISW = 100 mA ON resistance (SW2)
Switch ON resistance (m)
Switch ON resistance ()
8 7 6 5
300
250
200 9 10 11 12 13 14 15 Switching voitage (SWIN1) (V) ON resistance (temperature dependence characteristic: SWIN1) 450 400 VCC = 3.0 V VCC = 5.0 V VSWIN1 = 12 V
4 3 4 5 6 Switching voitage (SWIN2) (V) ON resistance (temperature dependence characteristic: SWIN2) 7.5 7.0 VCC = 3.0 V VCC = 5.0 V VSWIN2 = 12 V
Switch ON resistance (m)
Switch ON resistance ()
350 300 250 200
6.5 Ta = +75C 6.0 Ta = +25C 5.5 5.0 4.5 Ta = -25C
Ta = +75C Ta = +25C Ta = -25C
Ta = -40C 150 110 200 300 Isw (mA) ON resistance (temperature dependence characteristic: SWIN2 ) 11.5 VCC = 3.0 V 11.0 VCC = 5.0 V VSWIN2 = 3 V 10.5 Ta = +75C 10.0 9.5 9.0 8.5 8.0 Ta = -40C 7.5 20 40 60 Isw (mA) 80 100 18 9 Ta = +25C 34 400 500 4.0 20
Ta = -40C 40 60 Isw (mA) Charge pump output voltage VCC = 5.0 V 80 100
32
DLY pin output voltage (V)
Switch ON resistance ()
30 28 26 24 22 20
Ta = -25C
10
11 12 13 14 Switching voltage (SWIN1)(V)
15
(Continued)
11
MB3807A
(Continued)
Charge pump driving current 600 150 VCC = 5.0 V Vswout = OPEN 500 Ta = -40C 400 Ta = -25C Charge pump driving current VCC = 3.0 V VCC = 5.0 V ISW = 100m A 100
Charge pump driving current (A)
Charge pump driving current (A)
Ta = -40C Ta = -25C
Ta = +25C 300 Ta = +75C 200 9 10 11 12 13 14 15 Switching voltage (SWIN1) (V) Switch ON time (SW1) 80 SWIN1 = 12 V ISW = 0.5 A 70
50
Ta = +25C Ta = +75C
0 3 4 5 6 Switching voltage (SWIN2) (V) Switch OFF time (SW1) 100 90 80 SWIN1 = 12 V ISW = 0.5 A
OFF time (s)
70 60 50 40 30 20
ON time (s)
60
50
40 3 4 5 6 Supply voltage (Vcc) (V) Switch ON time (SW2) 600 ISW = 100m A 500
10 3 4 5 6 Supply voltage (Vcc) (V) Switch OFF time (SW2) 20 ISW = 100 mA 15
SWIN2 = 3.0 V 300 200 SWIN2 = 5.0 V 100
OFF time (s)
ON time (s)
400
10 SWIN2 = 3.0 V 5 SWIN2 = 5.0 V
0 3 4 5 6 Supply voltage (Vcc) (V)
0 3 4 5 6 Supply voltage (Vcc) (V)
12
MB3807A
s ORDERING INFORMATION
Part number MB3807APF Package 16 pin Plastic SOP (FPT-16P-M04) Remarks
13
MB3807A
s PACKAGE DIMENSION
16 pin Plastic SOP (FPT-16P-M04)
10.15 -0.20 .400 -.008
+0.25
+.010
2.10(.083)MAX
(MOUNTING HEIGHT)
0(0)MIN (STAND OFF) INDEX 3.900.30 (.154.012) 6.400.40 (.252.016) 5.40 -0.20 +.016 .213 -.008
+0.40
1.27(.050)TYP
0.450.10 (.018.004)
O0.13(.005)
M
0.15 -0.02 +.002 .006 -.001 Details of "A" part
+0.05
0.500.20 (.020.008)
0.20(.008)
0.10(.004) 8.89(.350)REF
"A" 0.50(.020) 0.18(.007)MAX 0.68(.027)MAX
C
1994 FUJITSU LIMITED F16012S-4C-4
Dimensions in mm (inches)
14
MB3807A
FUJITSU LIMITED
For further information please contact:
Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT, 4-1-1, Kamikodanaka Nakahara-ku, Kawasaki-shi Kanagawa 211-8588, Japan Tel: (044) 754-3763 Fax: (044) 754-3329
All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams. FUJITSU semiconductor devices are intended for use in standard applications (computers, office automation and other office equipment, industrial, communications, and measurement equipment, personal or household devices, etc.). CAUTION: Customers considering the use of our products in special applications where failure or abnormal operation may directly affect human lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems, atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with FUJITSU sales representatives before such use. The company will not be responsible for damages arising from such use without prior approval. Any semiconductor devices have inherently a certain rate of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Control Law of Japan, the prior authorization by Japanese government should be required for export of those products from Japan.
http://www.fujitsu.co.jp/
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http://www.fmap.com.sg/
F9803 (c) FUJITSU LIMITED Printed in Japan
16

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